Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask

摘要

A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.

主权项

1. A high electron mobility field effect transistor (HEMT) comprising:
lattice damage in a drift region of a carrier supply layer between a gate and a drain; wherein the lattice damage increases linearly along the drift region from near the drain to near the gate; and a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.