发明名称 Memory methods and systems with adiabatic switching
摘要 A memory system includes wordlines and pairs of complementary bitlines that provide access to memory storage elements. Capacitive and resistive loads associated with wordlines and bitlines are driven relatively slowly between voltage levels to reduce peak current, and thus power dissipation. Power dissipation is further reduced by charging complementary bitlines at substantially different rates.
申请公布号 US9001606(B2) 申请公布日期 2015.04.07
申请号 US201113703339 申请日期 2011.08.22
申请人 Rambus Inc. 发明人 Vogelsang Thomas;Haukness Brent
分类号 G11C7/02;G11C5/14;G11C7/08;G11C7/12;G11C11/4074;G11C11/408;G11C11/4091;G11C11/4094;G11C7/00 主分类号 G11C7/02
代理机构 Silicon Edge Law Group LLP 代理人 Silicon Edge Law Group LLP ;Behiel Arthur J.
主权项 1. A memory comprising: a voltage generator to provide a varying supply voltage; and a memory core having storage cells and sense amplifiers, each sense amplifier having an N-sense supply node to receive a constant supply voltage, and a P-sense supply node coupled to the voltage generator to receive the varying supply voltage; a memory interface coupled to the memory core to issue memory-control signals; and timing-control circuitry coupled to the memory interface and the voltage generator, the timing-control circuitry to synchronize the varying supply voltage with the memory-control signals.
地址 Sunnyvale CA US