发明名称 |
Small-grain three-dimensional memory |
摘要 |
The present invention discloses a small-grain three-dimensional memory (3D-MSG). Each of its memory cells comprises a thin-film diode with critical dimension no larger than 40 nm. The thin-film diode comprises at least a small-grain material, whose grain size G is substantially smaller than the diode size D. The small-grain material is preferably a nano-crystalline material or an amorphous material. The critical dimension f of the small-grain diode is smaller than the critical dimension F of the single-crystalline transistor. |
申请公布号 |
US9001555(B2) |
申请公布日期 |
2015.04.07 |
申请号 |
US201313848018 |
申请日期 |
2013.03.20 |
申请人 |
ChengDu HaiCun IP Technology LLC |
发明人 |
Zhang Guobiao |
分类号 |
G11C11/00;G11C11/36;G11C17/18;G11C11/34;G11C5/02;G11C17/16;G11C11/56;G11C13/00;G11C17/10 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
1. A small-grain three-dimensional memory, comprising:
a substrate level comprising a semiconductor substrate, said substrate level further comprising a plurality of functional transistors; and at least a first memory level stacked above said semiconductor substrate and coupled to said substrate level through a plurality of inter-level vias, said memory level comprising a plurality of memory cells, wherein each of said memory cells comprises a small-grain diode with a critical dimension no larger than 40 nm, a grain size of said small-grain diode being substantially smaller than a small-grain diode size; wherein the critical dimension of said first memory level is smaller than the critical dimension of said substrate level. |
地址 |
ChengDu, SiChuan CN |