发明名称 |
Manufacturing method of a semiconductor device |
摘要 |
According one embodiment, a method for manufacturing a semiconductor device is provided, which includes forming a pair of element isolation insulation films on a semiconductor substrate, forming a gate electrode structure on sides of the gate electrode structure, selectively removing oxide films that are formed on a top surface of the diffusion layer and a top surface of the gate electrode by placing the substrate in a gas atmosphere selected from the group consisting of F, Cl, Br, I, H, O, Ar, or N; and irradiating the semiconductor substrate with microwave radiation. The method also includes depositing a metal film on a top surface of the diffusion layer and a top surface of the gate electrode, and a silicide film is formed by heating the substrate. |
申请公布号 |
US8999855(B2) |
申请公布日期 |
2015.04.07 |
申请号 |
US201313791743 |
申请日期 |
2013.03.08 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Honda Makoto;Aoyama Tomonori |
分类号 |
H01L21/461;H01L29/66;H01L21/768;H01L21/02;H01L21/311;H01L21/28;H01L21/285 |
主分类号 |
H01L21/461 |
代理机构 |
Patterson & Sheridan LLP |
代理人 |
Patterson & Sheridan LLP |
主权项 |
1. A manufacturing method of a semiconductor device, comprising:
forming a pair of element isolation insulation films on a silicon-containing semiconductor substrate; forming a gate electrode structure on a surface of the silicon-containing semiconductor substrate, between the pair of element isolation insulating films; forming a diffusion layer on sides of the gate electrode structure; selectively removing oxide films that are formed on a top surface of the diffusion layer and a top surface of the gate electrode structure by heating the silicon-containing semiconductor substrate and the oxide films to a temperature greater than a temperature of the element isolation films, wherein the heating comprises irradiating the silicon-containing semiconductor substrate with microwave radiation without exciting a gas atmosphere surrounding the silicon-containing semiconductor substrate into a plasma; and depositing a metal film on a top surface of the diffusion layer and a top surface of the gate electrode structure. |
地址 |
Tokyo JP |