| 主权项 |
1. A method comprising:
forming a fin that extends from a substrate, wherein forming the fin comprises implanting first ion implants into the substrate at a first depth, wherein the fin comprises a first region having a first doping concentration and a second region having a second doping concentration, wherein the first region comprises at least one of the first ion implants, and wherein the first doping concentration is greater than the second doping concentration; forming a second fin that extends from the substrate, wherein forming the second fin comprises implanting second ion implants into the substrate at a second depth different than the first depth, wherein the second fin comprises a third region having a third doping concentration and a fourth region having a fourth doping concentration, and wherein the third region comprises at least one of the first ion implants; and forming an oxide layer on the substrate, wherein prior to source and drain formation of a fin-type semiconductor device that includes the fin, a doping concentration of the oxide layer is less than the first doping concentration. |
