发明名称 Process for encapsulating a micro-device by attaching a cap and depositing getter through the cap
摘要 A process for encapsulating a micro-device in a cavity formed between a first and a second substrate is provided, including producing the micro-device in or on the first substrate; attaching and securing the second substrate to the first substrate, thereby forming the cavity in which the micro-device is placed; producing at least one hole through one of the two substrates, leading into the cavity opposite a portion of the other of the two substrates; depositing at least one getter material portion through the hole on said portion of the other of the two substrates; and hermetically sealing the cavity by closing the hole.
申请公布号 US8999762(B2) 申请公布日期 2015.04.07
申请号 US201213645717 申请日期 2012.10.05
申请人 Commissariat à l'énergie atomique et aux énergies alternatives 发明人 Baillin Xavier;Pornin Jean-Louis
分类号 H01L21/16;B81C1/00;H01L23/26;H01L21/50 主分类号 H01L21/16
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A process for encapsulating a micro-device, comprising: producing the micro-device in or on at least one first substrate; attaching and securing at least one second substrate to the at least one first substrate, forming a cavity therebetween in which the micro-device is disposed; producing at least one hole through at least one of said at least one first substrate and said at least one second substrate, the at least one hole leading into the cavity opposite a portion of another of said at least one first substrate and said at least one second substrate; forming a relief by depositing at least one first material on said portion of the another of said at least one first substrate and said at least one second substrate, the relief having at least one sidewall; depositing at least one second material on said portion of the another of said at least one first substrate and said at least one second substrate through the at least one hole such that the deposited at least one second material does not obstruct the at least one hole, wherein the at least one second material is at least one getter material portion, and is deposited on at least a part of the at least one sidewall on said relief; and hermetically sealing the cavity by closing the at least one hole.
地址 Paris FR