Chemical mechanical polishing composition having chemical additives and methods for using same

摘要

Chemical-mechanical polishing (CMP) compositions containing chemical additives and methods of using the CMP compositions are disclosed. The CMP composition comprises abrasive; chemical additive; liquid carrier; optionally an oxidizing agent; a pH buffering agent and salt; a surfactant and a biocide. The CMP compositions and the methods provide enhanced removing rate for “SiC”, SiN” and “SiCxNy” films; and tunable removal selectivity for “SiC” in reference to SiO2, “SiN” in reference to SiO2, “SiC” in reference to “SiN”, or “SiCxNy” in reference to SiO2; wherein x ranges from 0.1 wt % to 55 wt %, y ranges from 0.1 wt % to 32 wt %.

主权项

1. A chemical mechanical polishing composition consisting of:
a) about 0.05 weight % to 30 weight % abrasive; b) about 0.025 weight % to about 5 weight % chemical additive; c) about 0.0001 weight % to about 0.03 weight % of a biocide; d) about 0.0 weight % to about 2.0 weight % of a pH buffering agent; e) optionally about 0.0001 weight % to about 1 weight % of a surfactant selected from the group consisting of ethoxylated saturated and unsaturated alcohols; and f) remaining is substantially liquid carrier; wherein the pH buffering agent used to lower the pH of the composition is selected from the group consisting of hydrochloric acid, nitric acid, sulfuric acid, tartaric acid, succinic acid, citric acid, malic acid, malonic acid, fatty acid, polycarboxylic acid, and mixtures thereof; and the pH buffering agent used to raise the pH of the composition is selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonia, and mixtures thereof; the chemical additive is a substituted 4-morpholine derivative having a general molecular structure of: wherein R is selected from the group consisting of alkyl, alkoxy, substituted organic group with one or more hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine, and combinations thereof; and pH of the chemical mechanical polishing composition is from about 2.0 to about 8.