| 摘要 |
<p>A doping apparatus for single crystal growth according to an embodiment of the present invention is for growing silicon single crystal from a silicon melt based on the Czochralski method, and comprises a lid unit disposed on an upper part of the central portion of a silicon melt and connected to an upper part of a chamber; and a dopant loading unit coupled to an outer circumferential surface of the lid unit, wherein the lid unit includes a disc-shaped cover unit, and an inclined part having an inclined surface in the center direction from an outer circumferential portion of the cover unit; and the dopant loading unit includes a cylindrical outer portion coupled to the outer circumferential portion of the cover unit, a cylindrical inner portion formed inside the cylindrical outer portion to have a height and a diameter smaller than those of the cylindrical outer portion, and a ring-shaped bottom portion connecting the cylindrical outer portion with a lower end of the cylindrical inner portion.</p> |
