发明名称 Method of fabrication, a multilayer electronic structure and structures in accordance with the method
摘要 A method of fabricating a multilayer electronic support structure comprising electroplating copper substructures, laying a dielectric pre-preg comprising a polymer resin over the copper substructures, and pressing to pressures of 200 to 600 PSI against a release film having a higher hardness than the resin of the prepreg but a lower hardness than the cured resin, and heating through a curing cycle while maintaining pressure.
申请公布号 US8997342(B2) 申请公布日期 2015.04.07
申请号 US201213652122 申请日期 2012.10.15
申请人 Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. 发明人 Hurwitz Dror;Huang Alex
分类号 H01K3/22;H05K1/02;H05K3/00;H05K3/46 主分类号 H01K3/22
代理机构 Wiggin and Dana LLP 代理人 Wiggin and Dana LLP ;Rosenblatt Gregory S.;Hall Jonathan D.
主权项 1. A method of fabricating a multilayer electronic support structure comprising: electroplating copper substructures, laying a dielectric pre-preg comprising a polymer resin over the copper substructures, placing a release film, having a hardness that is higher than a hardness of the resin of the pre-preg and lower than a hardness of a cured resin, over the dielectric pre-preg pressing to pressures of 200 to 600 PSI against the release film, and heating through a curing cycle whilst maintaining pressure; wherein the curing cycle comprises heating to a partial cure temperature and maintaining for 30 to 90 minutes, cooling down and applying a thinning and smoothing procedure selected from mechanical, chemical and chemical mechanical processing, and then heating to a full cure temperature for 30 to 90 minutes.
地址 Zhuhai CN