发明名称 |
Method of fabrication, a multilayer electronic structure and structures in accordance with the method |
摘要 |
A method of fabricating a multilayer electronic support structure comprising electroplating copper substructures, laying a dielectric pre-preg comprising a polymer resin over the copper substructures, and pressing to pressures of 200 to 600 PSI against a release film having a higher hardness than the resin of the prepreg but a lower hardness than the cured resin, and heating through a curing cycle while maintaining pressure. |
申请公布号 |
US8997342(B2) |
申请公布日期 |
2015.04.07 |
申请号 |
US201213652122 |
申请日期 |
2012.10.15 |
申请人 |
Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. |
发明人 |
Hurwitz Dror;Huang Alex |
分类号 |
H01K3/22;H05K1/02;H05K3/00;H05K3/46 |
主分类号 |
H01K3/22 |
代理机构 |
Wiggin and Dana LLP |
代理人 |
Wiggin and Dana LLP ;Rosenblatt Gregory S.;Hall Jonathan D. |
主权项 |
1. A method of fabricating a multilayer electronic support structure comprising:
electroplating copper substructures, laying a dielectric pre-preg comprising a polymer resin over the copper substructures, placing a release film, having a hardness that is higher than a hardness of the resin of the pre-preg and lower than a hardness of a cured resin, over the dielectric pre-preg pressing to pressures of 200 to 600 PSI against the release film, and heating through a curing cycle whilst maintaining pressure; wherein the curing cycle comprises heating to a partial cure temperature and maintaining for 30 to 90 minutes, cooling down and applying a thinning and smoothing procedure selected from mechanical, chemical and chemical mechanical processing, and then heating to a full cure temperature for 30 to 90 minutes. |
地址 |
Zhuhai CN |