发明名称 |
Method for manufacturing a device on a substrate |
摘要 |
A method for manufacturing a device on a substrate includes forming a layer structure on the substrate, forming an auxiliary layer on the layer structure, forming a planarization layer on the auxiliary layer and on the substrate, exposing the auxiliary layer by a chemical mechanical polishing process and removing at least partly the auxiliary layer to form a planar surface of the remaining auxiliary layer or of the layer structure and the planarization layer. The chemical mechanical polishing process has a first removal rate with respect to the planarization layer and a second removal rate with respect to the auxiliary layer and the first removal rate is greater than the second removal rate. |
申请公布号 |
US8999187(B2) |
申请公布日期 |
2015.04.07 |
申请号 |
US201314092624 |
申请日期 |
2013.11.27 |
申请人 |
Infineon Technologies AG |
发明人 |
Obernhuber Sandra;Jalics Christof;Adler Joerg;Hoeckele Uwe;Preis Walter;Goellner Reinhard;Ippisch Tanja;Nickut Patricia |
分类号 |
C03C15/00;H01L41/297;H03H3/04 |
主分类号 |
C03C15/00 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A method for manufacturing a device on a substrate, the method comprising:
forming a layer structure on the substrate; forming an auxiliary layer on the layer structure; forming a planarization layer on the auxiliary layer and on the substrate; exposing the auxiliary layer and the planarization layer to a chemical mechanical polishing process, wherein a top surface of the planarization layer around the auxiliary layer is coplanar with a top surface of the layer structure after the chemical mechanical polishing process, wherein the chemical mechanical polishing process comprises a first removal rate with respect to the planarization layer and a second removal rate with respect to the auxiliary layer, and wherein the first removal rate is greater than the second removal rate; and selectively removing the auxiliary layer to form a substantially planar surface of remaining auxiliary layer or of the layer structure and the planarization layer. |
地址 |
Neubiberg DE |