| 发明名称 | Substrate processing apparatus | ||
| 摘要 | In a method for forming a stacked substrate of a MOS (Metal Oxide Semiconductor) structure including an oxide film serving as a gate insulating film formed on a semiconductor material layer having a film or substrate shape; and a conductive film serving as a gate electrode formed on the oxide film, a polysilane film on the semiconductor material layer is formed by coating a polysilane solution on a surface of a substrate to which the semiconductor material layer is exposed. A film containing metal ions is formed on the polysilane film by coating a metal salt solution thereon, and the polysilane film and the film containing metal ions are respectively modified into a polysiloxane film and a film containing fine metal particles to form the stacked substrate. | ||
| 申请公布号 | US8999102(B2) | 申请公布日期 | 2015.04.07 |
| 申请号 | US201414306718 | 申请日期 | 2014.06.17 |
| 申请人 | Tokyo Electron Limited | 发明人 | Miyoshi Hidenori;Azumo Shuji |
| 分类号 | H01L21/02;H01L21/67;H01L21/28;H01L21/3205;H01L21/445;H01L21/768;H01L29/49;H01L29/51;H01L51/05;H01L29/16;H01L29/20;H01L29/22;H01L51/00 | 主分类号 | H01L21/02 |
| 代理机构 | Rothwell, Figg, Ernst & Manbeck, P.C. | 代理人 | Rothwell, Figg, Ernst & Manbeck, P.C. |
| 主权项 | 1. A substrate processing apparatus comprising: a first coating unit configured to form a polysilane film on a semiconductor material layer having a film or substrate shape by coating a polysilane solution on a surface of a substrate to which the semiconductor material layer is exposed; a second coating unit configured to form a film containing metal ions on the polysilane film by coating a metal salt thereon; and a transfer unit configured to convey the substrate from the first coating unit to the second coating unit such that after formation of the polysilane film in the first coating unit, the substrate is transferred to the second coating unit, wherein the film containing metal ions is formed on the polysilane film, and wherein the polysilane film and the film containing metal ions are modified into a polysiloxane film and a film containing fine metal particles, respectively, to form a stacked substrate of a MOS structure. | ||
| 地址 | Tokyo JP | ||