发明名称 Inductor for post passivation interconnect
摘要 An inductor device and method of forming the inductor device are provided. In some embodiments the inductor device includes a post passivation interconnect (PPI) layer disposed and an under bump metallization (UBM) layer, each disposed over a substrate. The PPI layer forms a coil and dummy pads. The dummy pads are disposed around a substantial portion of the coil to shield the coil from electromagnetic interference. A first portion of the UBM layer is electrically coupled to the coil and configured to interface with an electrical coupling member.
申请公布号 US9000876(B2) 申请公布日期 2015.04.07
申请号 US201213419272 申请日期 2012.03.13
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Tsai Hao-Yi;Chen Hsien-Wei;Kuo Hung-Yi;Chen Jie;Chen Ying-Ju;Yu Tsung-Yuan
分类号 H01F5/00;H01F27/28;H01F27/36;H01L31/107;H01L23/522;H01L23/552;H01L23/00;H01L49/02;H01L23/58 主分类号 H01F5/00
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. An inductor device, comprising: a post passivation interconnect (PPI) layer disposed over a substrate, the PPI layer forming a coil and dummy pads, the dummy pads disposed around a substantial portion of the coil to shield the coil from electromagnetic interference; and an under bump metallization (UBM) layer disposed over the substrate, a first portion of the UBM layer electrically coupled to the coil and configured to interface with an electrical coupling member.
地址 Hsin-Chu TW
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