发明名称 |
Inductor for post passivation interconnect |
摘要 |
An inductor device and method of forming the inductor device are provided. In some embodiments the inductor device includes a post passivation interconnect (PPI) layer disposed and an under bump metallization (UBM) layer, each disposed over a substrate. The PPI layer forms a coil and dummy pads. The dummy pads are disposed around a substantial portion of the coil to shield the coil from electromagnetic interference. A first portion of the UBM layer is electrically coupled to the coil and configured to interface with an electrical coupling member. |
申请公布号 |
US9000876(B2) |
申请公布日期 |
2015.04.07 |
申请号 |
US201213419272 |
申请日期 |
2012.03.13 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Tsai Hao-Yi;Chen Hsien-Wei;Kuo Hung-Yi;Chen Jie;Chen Ying-Ju;Yu Tsung-Yuan |
分类号 |
H01F5/00;H01F27/28;H01F27/36;H01L31/107;H01L23/522;H01L23/552;H01L23/00;H01L49/02;H01L23/58 |
主分类号 |
H01F5/00 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. An inductor device, comprising:
a post passivation interconnect (PPI) layer disposed over a substrate, the PPI layer forming a coil and dummy pads, the dummy pads disposed around a substantial portion of the coil to shield the coil from electromagnetic interference; and an under bump metallization (UBM) layer disposed over the substrate, a first portion of the UBM layer electrically coupled to the coil and configured to interface with an electrical coupling member. |
地址 |
Hsin-Chu TW |