发明名称 Nanoparticle synthesis
摘要 A noble metal nanoparticle can be grown on a semiconductor substrate by contacting a predetermined region of the substrate with a solution including noble metal ions. The predetermined region of the semiconductor substrate can be exposed by applying a polymeric layer over the substrate selectively removing a portion of the polymeric layer. The nanoparticles can be prepared in a predetermined pattern. The nanoparticle can be formed with a barrier separating it from another nanoparticle on the substrate; for example, nanoparticle can be located in a pit etched in the substrate. The size and location of the nanoparticle can be stable at elevated temperatures.
申请公布号 US9000416(B2) 申请公布日期 2015.04.07
申请号 US201313744011 申请日期 2013.01.17
申请人 Massachusetts Institute of Technology 发明人 Gradecak Silvija;Tseng Chun-Hao;Lim Sung Keun
分类号 H01L29/06;H01L31/00;H01L29/66;B22F1/00;B22F9/24;B82Y30/00;C30B7/14;C30B29/02;C30B29/60 主分类号 H01L29/06
代理机构 Steptoe & Johnson LLP 代理人 Steptoe & Johnson LLP
主权项 1. A composition comprising: a noble metal nanoparticle positioned on a predetermined region of a semiconductor substrate, the noble metal nanoparticle being separated from another nanoparticle on the substrate by a barrier, wherein the barrier is a portion of the semiconductor substrate that is raised relative to the region of the semiconductor substrate upon which the nanoparticle is positioned.
地址 Cambridge MA US