发明名称 |
Nanoparticle synthesis |
摘要 |
A noble metal nanoparticle can be grown on a semiconductor substrate by contacting a predetermined region of the substrate with a solution including noble metal ions. The predetermined region of the semiconductor substrate can be exposed by applying a polymeric layer over the substrate selectively removing a portion of the polymeric layer. The nanoparticles can be prepared in a predetermined pattern. The nanoparticle can be formed with a barrier separating it from another nanoparticle on the substrate; for example, nanoparticle can be located in a pit etched in the substrate. The size and location of the nanoparticle can be stable at elevated temperatures. |
申请公布号 |
US9000416(B2) |
申请公布日期 |
2015.04.07 |
申请号 |
US201313744011 |
申请日期 |
2013.01.17 |
申请人 |
Massachusetts Institute of Technology |
发明人 |
Gradecak Silvija;Tseng Chun-Hao;Lim Sung Keun |
分类号 |
H01L29/06;H01L31/00;H01L29/66;B22F1/00;B22F9/24;B82Y30/00;C30B7/14;C30B29/02;C30B29/60 |
主分类号 |
H01L29/06 |
代理机构 |
Steptoe & Johnson LLP |
代理人 |
Steptoe & Johnson LLP |
主权项 |
1. A composition comprising:
a noble metal nanoparticle positioned on a predetermined region of a semiconductor substrate, the noble metal nanoparticle being separated from another nanoparticle on the substrate by a barrier, wherein the barrier is a portion of the semiconductor substrate that is raised relative to the region of the semiconductor substrate upon which the nanoparticle is positioned. |
地址 |
Cambridge MA US |