发明名称 Memory device with low reset current
摘要 An electronic device includes a first electrode and a second electrode. The device also includes a resistive material between the first and second electrodes. An active material is between the first electrode and the resistive material. The active material is in electrical communication with the first electrode and the active material is in electrical communication with the second electrode through the resistive layer.
申请公布号 US9000408(B2) 申请公布日期 2015.04.07
申请号 US200711871761 申请日期 2007.10.12
申请人 Ovonyx, Inc. 发明人 Kostylev Sergey;Lowrey Tyler;Czubatyj Wolodymyr
分类号 H01L45/00 主分类号 H01L45/00
代理机构 Honigman Miller Schwartz and Cohn LLP 代理人 Honigman Miller Schwartz and Cohn LLP
主权项 1. An electronic device comprising: a first electrode having an upper surface and a lower surface, wherein the upper surface of the first electrode includes a first upper surface portion and a second upper surface portion; an insulator having an upper surface, a lower surface and an inner sidewall surface connecting the upper surface of the insulator to the lower surface of the insulator, wherein the lower surface of the insulator is disposed adjacent the first upper surface portion of the first electrode, wherein the inner sidewall surface of the insulator defines a pore passage that extends through the insulator such that the lower surface of the insulator does not contact the second upper surface portion of the first electrode; an active material having an upper surface, a first lower surface portion, a second lower surface portion and an outer sidewall surface portion connecting the first lower surface portion to the second lower surface portion, wherein the first lower surface portion of the active material is disposed adjacent the upper surface of the insulator, wherein the second lower surface portion of the active material is disposed adjacent the second surface portion of the upper surface of the first electrode, wherein the outer sidewall surface portion of the active material is disposed adjacent the inner sidewall surface portion of the insulator; a dielectric material having an upper surface and a lower surface, wherein the lower surface of the dielectric material is disposed adjacent the upper surface of the active material; and a second electrode having an upper surface and a lower surface, wherein the lower surface of the second electrode is disposed adjacent the upper surface of the dielectric material.
地址 Sterling Heights MI US