发明名称 System and method for process and temperature calibration of capacitor-based oscillators
摘要 A method and device for calibrating an oscillator and a temperature sensor in an electronic device are provided. A same temperature cycle, which includes at least two distinct temperatures, may be used to obtain data to calibrate both the oscillator and the temperature sensor. One of the distinct temperatures may comprise an ambient temperature, and a second distinct temperature may comprise a heated temperature greater than the ambient temperature. The electronic device (or a calibration device separate from the electronic device) may receive the readings from the oscillator and the temperature sensor at the two distinct temperatures in the same temperature cycle, and may determine an oscillator correction factor and a temperature sensor correction factor.
申请公布号 US9000856(B1) 申请公布日期 2015.04.07
申请号 US201414329203 申请日期 2014.07.11
申请人 SanDisk Technologies Inc. 发明人 Pancholi Deepak;Odedara Bhavin
分类号 H03L1/02;H03B5/12;H03L1/04 主分类号 H03L1/02
代理机构 Brinks Gilson & Lione 代理人 Brinks Gilson & Lione
主权项 1. A method for obtaining temperature sensor output from a temperature sensor and oscillator output from an oscillator in a same temperature cycle in order to calibrate the temperature sensor and the oscillator in an electronic device, the electronic device comprising a memory, the method comprising: sending a command in order to configure the oscillator to a predetermined frequency; determining a first temperature of the electronic device; while the electronic device is at the first temperature in the same temperature cycle: receiving a first output of the temperature sensor indicative of the temperature sensor sensing the electronic device at the first temperature;sensing a first output of the oscillator indicative of the oscillator generating a first frequency output at the first temperature; controlling temperature of the electronic device so that the electronic device is at a second temperature in the same temperature cycle, the second temperature distinct from the first temperature; while the temperature of the electronic device is being controlled at the second temperature in the same temperature cycle: receiving a second output of the temperature sensor indicative of the temperature sensor sensing the electronic device at the second temperature;sensing a second output of the oscillator indicative of the oscillator generating a second frequency output at the second temperature; determining a temperature sensor correction factor based on the first output of the temperature sensor, the second output of the temperature sensor, the determined first temperature and the determined second temperature; and determining an oscillator correction factor based on the first output of the oscillator, the second output of the oscillator, the determined first temperature, the determined second temperature and the predetermined frequency, wherein the memory comprises a silicon substrate and a plurality of memory cells forming at least two memory layers vertically disposed with respect to each other to form a monolithic three-dimensional structure, wherein at least one memory layer is vertically disposed with respect to the silicon substrate.
地址 Plano TX US