Semiconductor device and fabricating method thereof

摘要

A semiconductor device and method of fabricating the device are provided, the method including providing an insulating layer, wherein the insulating layer covers an active region and a gate of at least one semiconductor device; forming connection holes to the active region in the insulating layer to expose at least part of the active region, wherein the connection holes include a first portion of a first width and a second portion of a second width, the first portion of the connection holes being adjacent to the active region, and the first width being less than the second width; filling the connection holes with a metal material to form the contacts to the active region. As such, contacts formed for the active region also include a first portion of a first width and a second portion of a second width.

主权项

1. A method of fabricating a semiconductor device, comprising:
providing an insulating layer on the semiconductor device, wherein the insulating layer covers an active region and a gate on the semiconductor device; forming at least one connection hole in the insulating layer, wherein the at least one connection hole includes a first portion having a first width and a second portion having a second width, wherein the first portion of the connection hole is adjacent to the active region, and the first width is less than the second width; and filling the connection hole with a metal material to form a contact to the active region, wherein forming at least one connection hole comprises:
applying a photoresist layer on the surface of the insulating layer, the photoresist layer having a window of the first width on the surface of the insulating layer, etching the insulating layer using the photoresist layer with the window to form the opening having the first width;filling a Bottom Anti-Reflective Coating (BARC) within the opening having the first width;widening the window of the photoresist layer to the second width, and then etching the insulating layer using the photoresist layer with the window having the second width to widen a portion of the opening; andremoving the BARC.