Semiconductor structure having an air-gap region and a method of manufacturing the same

摘要

A method of manufacturing a semiconductor structure, the method includes removing a portion of a dielectric filler from a first metal-containing layer formed over a semiconductor substrate to define an air-gap region according to a predetermined air-gap pattern. The method further includes filling the air-gap region with a decomposable filler and forming a dielectric capping layer over the first metal-containing layer. The method further includes decomposing the decomposable filler.

主权项

1. A method of manufacturing a semiconductor structure comprising:
removing a portion of a dielectric filler from a first metal-containing layer formed over a semiconductor substrate to define an air-gap region according to a predetermined air-gap pattern, the first metal-containing layer comprising a metal structure and the dielectric filler; filling the air-gap region with a decomposable filler; forming a dielectric capping layer over the first metal-containing layer and the decomposable filler; decomposing the decomposable filler; forming an insulating layer over the dielectric capping layer; forming a via plug in the insulating layer, the via plug being formed over the metal structure of the first metal-containing layer without overlapping the air-gap region; and forming a conductive pad over the insulating layer, the conductive pad being formed without overlapping the air-gap region.