发明名称 Semiconductor device and electronic unit
摘要 Thin-film transistors and techniques for forming thin-film transistors (TFT). In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT. The TFT comprises a body region comprising an organic semiconducting material and a protective layer contacting the body region and comprising an organic insulating material that, when a solution comprising the organic insulating material contacts the organic semiconducting material, causes the organic insulating material to phase separate with the organic semiconducting material.
申请公布号 US8999776(B2) 申请公布日期 2015.04.07
申请号 US201414470734 申请日期 2014.08.27
申请人 Sony Corporation 发明人 Nomoto Akihiro
分类号 H01L51/00;H01L51/05;H01L51/10;H01L27/28 主分类号 H01L51/00
代理机构 Wolf, Greenfield & Sacks, P.C. 代理人 Wolf, Greenfield & Sacks, P.C.
主权项 1. A method of forming a thin-film transistor (TFT) comprising: forming a body region of the TFT, the body region comprising an organic semiconducting material; and forming a protective layer comprising an organic insulating material, wherein forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material, the organic insulating material being a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material.
地址 Tokyo JP