发明名称 |
Semiconductor device and electronic unit |
摘要 |
Thin-film transistors and techniques for forming thin-film transistors (TFT). In some embodiments, there is provided a method of forming a TFT, comprising forming a body region of the TFT comprising an organic semiconducting material, and forming a protective layer comprising an organic insulating material. Forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material. The organic insulating material is a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. In other embodiments, there is provided an apparatus comprising a TFT. The TFT comprises a body region comprising an organic semiconducting material and a protective layer contacting the body region and comprising an organic insulating material that, when a solution comprising the organic insulating material contacts the organic semiconducting material, causes the organic insulating material to phase separate with the organic semiconducting material. |
申请公布号 |
US8999776(B2) |
申请公布日期 |
2015.04.07 |
申请号 |
US201414470734 |
申请日期 |
2014.08.27 |
申请人 |
Sony Corporation |
发明人 |
Nomoto Akihiro |
分类号 |
H01L51/00;H01L51/05;H01L51/10;H01L27/28 |
主分类号 |
H01L51/00 |
代理机构 |
Wolf, Greenfield & Sacks, P.C. |
代理人 |
Wolf, Greenfield & Sacks, P.C. |
主权项 |
1. A method of forming a thin-film transistor (TFT) comprising:
forming a body region of the TFT, the body region comprising an organic semiconducting material; and forming a protective layer comprising an organic insulating material, wherein forming the protective layer comprises contacting the body region of the TFT with a solution comprising the organic insulating material, the organic insulating material being a material that phase separates with the organic semiconducting material when the solution contacts the organic semiconducting material. |
地址 |
Tokyo JP |