发明名称 Methods to prevent filler entrapment in microelectronic device to microelectronic substrate interconnection structures
摘要 Embodiments of the present description include methods for attaching a microelectronic device to a microelectronic substrate with interconnection structures after disposing of an underfill material on the microelectronic device, wherein filler particles within the underfill material may be repelled away from the interconnection structures prior to connecting the microelectronic device to the microelectronic structure. These methods may include inducing a charge on the interconnection structures and may include placing the interconnection structures between opposing plates and producing a bias between the opposing plates after depositing the underfill material on the interconnection structures.
申请公布号 US8999765(B2) 申请公布日期 2015.04.07
申请号 US201313925967 申请日期 2013.06.25
申请人 Intel Corporation 发明人 Dubey Manish;Dias Rajendra C.;Xiu Yonghao;Krishnan Arjun;Bai Yiqun;Muthur Srinath Purushotham Kaushik
分类号 H01L23/488;H01L21/56 主分类号 H01L23/488
代理机构 Winkle, PLLC 代理人 Winkle, PLLC
主权项 1. A method, comprising: providing a microelectronic device having an active surface and an opposing back surface with at least one interconnection structure extending from the microelectronic device active surface; disposing an underfill material over the microelectronic device active surface and the at least one microelectronic device interconnection structure which forms an outer surface opposing the microelectronic device active surface, wherein the underfill material includes filler particles dispersed within a carrier material; repelling the filler particles within the carrier material from between the at least one microelectronic device interconnection structure and the underfill material outer surface; and attaching the at least one microelectronic device interconnection structure to a respective bond land on a microelectronic substrate after repelling the filler particles within the carrier material from between the at least one microelectronic device interconnection structure and the underfill material outer surface.
地址 Santa Clara CA US