发明名称 Voltage generator circuit
摘要 Embodiments are provided that include a circuit for generating voltage in a memory. One such circuit includes a charge pump circuit including a first transistor, a high-voltage switch circuit, and a cut-off switch circuit arranged to reduce leakage current from the charge pump circuit. The cut-off switch circuit includes a second transistor, wherein an output of the charge pump circuit is coupled to one of a source node and a drain node of the second transistor, and a first control signal is input at a gate of the second transistor. Further embodiments provide a method for generating voltage. One such method includes enabling a first transistor coupled to an output of a charge pump circuit when the charge pump is operating and disabling the first transistor coupled to the output of the charge pump circuit when the charge pump circuit is not operating.
申请公布号 US9000836(B2) 申请公布日期 2015.04.07
申请号 US200811972483 申请日期 2008.01.10
申请人 Micron Technology, Inc. 发明人 Tanzawa Toru
分类号 H03K3/01;H02M3/07;G11C16/30;H02M1/36 主分类号 H03K3/01
代理机构 Fletcher Yoder, P.C. 代理人 Fletcher Yoder, P.C.
主权项 1. A device for generating voltage, comprising: a charge pump circuit comprising a first transistor; a high-voltage switch circuit coupled to a cut-off switch circuit; the cut-off switch circuit configured to be enabled when the charge pump circuit is operating and disabled when the charge pump circuit is not operating to reduce leakage current from the charge pump circuit, the cut-off switch comprising a second transistor, wherein an output of the charge pump circuit is coupled to one of a source node and a drain node of the second transistor, and a first control signal is input at a gate of the second transistor; and a discharge circuit configured to discharge the charge pump circuit to a lower potential when the charge pump circuit is not operating.
地址 Boise ID US