| 发明名称 | Driver circuit with controlled gate discharge current | ||
| 摘要 | The gate of a drive transistor having a drain and source is discharged by a circuit including a sensing circuit configured to sense a drain-to-source voltage of the drive transistor. A first current sink path is coupled to the gate of the drive transistor. The first current sink path applies a high discharge current to the gate of the drive transistor when the sensing current senses a lower drain-to-source voltage of the drive transistor. A second current sink path is also coupled to the gate of the drive transistor. The second current sink path is configured to apply a low discharge current to the gate of the drive transistor when the sensing current senses a higher drain-to-source voltage of the drive transistor. | ||
| 申请公布号 | US9000811(B2) | 申请公布日期 | 2015.04.07 |
| 申请号 | US201414199313 | 申请日期 | 2014.03.06 |
| 申请人 | STMicroelectronics R&D (Shanghai) Co. Ltd | 发明人 | Wang Fei;Bai Wen Li |
| 分类号 | H03K3/00;H03K17/04;H03K17/00 | 主分类号 | H03K3/00 |
| 代理机构 | Gardere Wynne Sewell LLP | 代理人 | Gardere Wynne Sewell LLP |
| 主权项 | 1. A circuit for discharging a gate of a drive transistor having a drain and source, comprising: a sensing circuit configured to sense a drain-to-source voltage of the drive transistor; a first current sink path coupled to the gate of the drive transistor, said first current sink path configured to apply a first discharge current to the gate of the drive transistor when the sensing circuit senses a first drain-to-source voltage of the drive transistor; and a second current sink path coupled to the gate of the drive transistor, said second current sink path configured to apply a second discharge current, less than the first discharge current, to the gate of the drive transistor when the sensing circuit senses a second drain-to-source voltage of the drive transistor that is greater than the first drain-to-source voltage. | ||
| 地址 | Shanghai CN | ||