发明名称 Scintillator single crystal, heat treatment method for production of scintillator single crystal, and method for production of scintillator single crystal
摘要 The scintillator single crystal of the invention comprises a cerium-activated orthosilicate compound represented by the following general formula (1). The scintillator single crystal of the invention exhibits improved scintillation properties by reduced segregation between elements in the crystal ingot. Lm2−(x+y+z)LnxLuyCezSiO5  (1) (Wherein Lm represents at least one element selected from among Sc and Y and lanthanoid elements with lower atomic numbers than Lu, Ln represents at least one element selected from among Sc, Y, B, Al, Ga and In and lanthanoid elements with ion radii intermediate between Lm and Lu, x represents a value of greater than zero and no greater than 0.5, y represents a value of greater than 1 and less than 2, and z represents a value of greater than zero and no greater than 0.1.).
申请公布号 US8999281(B2) 申请公布日期 2015.04.07
申请号 US200812130179 申请日期 2008.05.30
申请人 Hitachi Chemical Company, Ltd. 发明人 Kurata Yasushi;Shimura Naoaki;Usui Tatsuya
分类号 C01F17/00;C30B29/22;C30B15/00;C30B33/02;C09K11/77 主分类号 C01F17/00
代理机构 Westerman, Hattori, Daniels & Adrian, LLP 代理人 Westerman, Hattori, Daniels & Adrian, LLP
主权项 1. A scintillator single crystal comprising a cerium-activated orthosilicate compound represented by the following general formula (1): Gd2−(x+y+z)LnxLuyCezSiO5  (1),wherein Ln represents at least one element selected from the group consisting of Sc, Y, B, Al, Ga and In and lanthanoid elements other than Gd and Lu with ion radii intermediate between Gd and Lu, x represents a value of greater than 0.02 and no greater than 0.1, y represents a value of greater than 1.6 and less than 2, and z represents a value of greater than zero and no greater than 0.1, wherein [2−(x+y+z)] is a value greater than zero and no greater than 0.38.
地址 Tokyo JP