| 发明名称 | Process for bonding two substrates | ||
| 摘要 | The invention relates to a method for bonding two substrates, in particular, two semiconductor substrates that, in order to be able to improve the reliability of the process, provides the step of providing a gaseous flow over the bonding surfaces of the substrates. The gaseous flow is preferably a laminar flow that is essentially parallel to the bonding surfaces of the substrates, and has a temperature in a range of from room temperature up to 100° C. | ||
| 申请公布号 | US8999090(B2) | 申请公布日期 | 2015.04.07 |
| 申请号 | US201313749471 | 申请日期 | 2013.01.24 |
| 申请人 | SOITEC | 发明人 | Gaudin Gweltaz;Lallement Fabrice;Colnat Cyrille;Giard Pascale |
| 分类号 | B32B37/00;H01L21/18;H01L21/67;H01L21/762 | 主分类号 | B32B37/00 |
| 代理机构 | TraskBritt | 代理人 | TraskBritt |
| 主权项 | 1. A method for reducing bonding defects when bonding two substrates to one another, which comprises, prior to bonding, providing a gaseous flow over bonding surfaces between the substrates until the substrates come into contact, wherein providing the gaseous flow comprises using a gas inflow device and a gas outflow device arranged and configured such that the gaseous flow is a laminar flow that is essentially parallel to the bonding surfaces of the substrates, and the gaseous flow has a temperature in a range of from room temperature up to 100° C.; and thereafter bonding the substrates together to reduce defects compared to bonding substrates without the prior gaseous flow over the bonding surfaces. | ||
| 地址 | Bernin FR | ||