发明名称 Method and design for high performance non-volatile memory
摘要 A non-volatile memory (NVM) system compatible with double data rate, single data rate, or other high speed serial burst operation. The NVM system includes input and output circuits adapted to synchronously send or receive back-to-back continuous bursts of serial data at twice the frequency of any clock input. Each burst is J bits in length. The NVM system includes read and write circuits that are adapted to read or write J bits of data at a time and in parallel, for each of a multitude of parallel data paths. Data is latched such that write time is similar for each bit and is extended to the time it takes to transmit an entire burst. Consequently, the need for small and fast sensing circuits on every column of a memory array, and fast write time at twice the frequency of the fastest clock input, are relieved.
申请公布号 US9001607(B2) 申请公布日期 2015.04.07
申请号 US201213444079 申请日期 2012.04.11
申请人 Samsung Electronics Co., Ltd. 发明人 Ong Adrian E.
分类号 G11C7/00;G11C7/22;G11C7/10;G11C13/00;G11C11/16 主分类号 G11C7/00
代理机构 Renaissance IP Law Group LLP 代理人 Renaissance IP Law Group LLP
主权项 1. A method for enabling higher data bandwidth in resistive type non-volatile random access memory circuits, the method comprising: synchronously latching a first serial burst having a first plurality of bits; storing the first plurality of bits in parallel to a first plurality of non-volatile memory cells; receiving a second plurality of bits in parallel stored in a second plurality of non-volatile memory cells; synchronously providing the second plurality of bits as a second serial burst; receiving a clock signal; receiving an inverted clock signal; generating a first plurality of latch control signals responsive to the clock signal; generating a second plurality of latch control signals responsive to the inverted clock signal; latching, by a first plurality of latches, every other bit starting with the first even bit in the first serial burst; latching, by a second plurality of latches, every other bit starting with the first odd bit in the first serial burst; receiving, by a register, the latched bits in parallel from the first plurality of latches and the second plurality of latches responsive to a register control signal; receiving, by a write switch, the bits in parallel from the register; rearranging the order of the bits based on a predefined burst sequence; and outputting the rearranged bits in parallel to a global write and sense amplifier block.
地址 KR