| 发明名称 | Semiconductor memory device and method of operating the same | ||
| 摘要 | A semiconductor memory device is operated by forming channels in a cell string including a plurality of memory cells and coupled between a bit line and a source line, applying first and second erase voltages having different levels to the channels through the bit line and the source line, respectively, and applying a first word line voltage to at least one word line among word lines coupled to the plurality of memory cells. | ||
| 申请公布号 | US9001592(B2) | 申请公布日期 | 2015.04.07 |
| 申请号 | US201213605963 | 申请日期 | 2012.09.06 |
| 申请人 | SK Hynix Inc. | 发明人 | Jang Yoon Soo |
| 分类号 | G11C16/04;G11C16/16;H01L27/115;H01L29/792 | 主分类号 | G11C16/04 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A method of operating a semiconductor memory device, the method comprising: forming channels in a cell string including a plurality of memory cells stacked over a substrate, wherein the cell string is coupled between a bit line and a source line; applying first and second erase voltages having different levels to the channels through the bit line and the source line, respectively; and applying a first word line voltage to at least one word line among word lines coupled to the plurality of memory cells. | ||
| 地址 | Gyeonggi-do KR | ||