发明名称 Compensation of changes in MEMS capacitive transduction
摘要 A method for compensating for strain on a MEMS device includes generating a signal indicative of a strain on the MEMS device in a first mode of operating a system including the MEMS device. The method includes compensating for the strain in a second mode of operating the system based on the signal. Generating the signal may include comparing an indicator of a resonant frequency of the MEMS device to a predetermined resonant frequency of the MEMS device. Generating the signal may include comparing a first output of a strain-sensitive device to a second output of a strain-insensitive device and generating an indicator thereof. Generating the signal may include sensing a first capacitive transduction of strain-sensitive electrodes of the MEMS device in the first mode and generating the signal based thereon. The strain-sensitive electrodes of the MEMS device may be disabled in the second mode.
申请公布号 US9000833(B2) 申请公布日期 2015.04.07
申请号 US201313786686 申请日期 2013.03.06
申请人 Silicon Laboratories Inc. 发明人 Caffee Aaron;Quevy Emmanuel P.
分类号 H01L41/00;H02N1/00;B81B7/00 主分类号 H01L41/00
代理机构 Abel Law Group, LLP 代理人 Abel Law Group, LLP
主权项 1. A method of compensating for strain on a microelectromechanical system (MEMS) device comprising: generating a signal indicative of a strain on the MEMS device in a first mode of operating a system including the MEMS device, the signal being based on a first capacitive transduction of strain-sensitive electrodes of the MEMS device sensed in the first mode of operating the system; disabling the strain-sensitive electrodes of the MEMS device in a second mode of operating the system and operating the system in the second mode using second electrodes of the MEMS device, the second electrodes being less sensitive to strain than the first electrodes; and compensating for the strain in a second mode of operating the system based on the signal.
地址 Austin TX US