发明名称 Elongated via structures
摘要 An integrated circuit structure includes a plurality of insulator layers (connected to each other) that form a laminated structure. Further included are via openings within each of the insulator layers, and conductive via material within the via openings. The conductive via material within corresponding via openings of adjacent insulator layers are electrically connected to form continuous electrical via paths through the insulator layers between the top surface and the bottom surface of the laminated structure. Within each of the continuous electrical via paths, the via openings are positioned relative to each other to form a diagonal structural path of the conductive via material through the laminated structure. The corresponding via openings of the adjacent insulator layers partially overlap each other. The diagonal structural paths are non-perpendicular to the top surface and the bottom surface.
申请公布号 US8999846(B2) 申请公布日期 2015.04.07
申请号 US201414255037 申请日期 2014.04.17
申请人 International Business Machines Corporation 发明人 LaCroix Luke D.;Lamorey Mark C. H.;Patel Janak G.;Slota, Jr. Peter;Stone David B.
分类号 H01L21/311;H01L21/768;H01L23/522;H01L23/528 主分类号 H01L21/311
代理机构 Gibb & Riley, LLC 代理人 Gibb & Riley, LLC ;Cain, Esq. David A.
主权项 1. A method of forming an integrated circuit structure comprising: forming via openings in an insulator layer; forming conductive via material within said via openings; and forming a laminated structure of insulator layers on said insulator layer, said forming of said laminated structure of insulator layers comprising: successively forming said insulator layers on one another;repeating said forming of said via openings in each said insulator layers;positioning corresponding ones of via openings of adjacent ones of said insulator layers to partially overlap each other; andrepeating said forming of said conductive via material in said via openings, said laminated structure of insulated layers being formed to have a top surface and a bottom surface opposite said top surface, said insulator layers being formed between said top surface and said bottom surface of said laminated structure of insulator layers, said repeating of said forming of said conductive via material in said via openings electrically connecting said conductive via material within said corresponding ones of said via openings to form continuous electrical via paths through said insulator layers between said top surface and said bottom surface of said laminated structure of insulator layers, said positioning of said corresponding ones of via openings within each of said continuous electrical via paths causing said forming of said conductive via material to form a diagonal structural path of said conductive via material through said laminated structure of insulator layers, and said diagonal structural path being formed non-perpendicular to said top surface and said bottom surface.
地址 Armonk NY US