Method to form finFET/trigate devices on bulk semiconductor wafers

摘要

A method for fabricating a finFET device having an insulating layer that insulates the fin from a substrate is described. The insulating layer can prevent leakage current that would otherwise flow through bulk semiconductor material in the substrate. The structure may be fabricated starting with a bulk semiconductor substrate, without the need for a semiconductor-on-insulator substrate. Fin structures may be formed by epitaxial growth, which can improve the uniformity of fin heights in the devices.

主权项

1. A method for making a fin-FET, the method comprising:
depositing a first layer comprising sacrificial material on a substrate; depositing a second layer of a first semiconductor material over the first layer; forming a plurality of fins for one or more fin-FETs in the second layer; and removing at least portions of the first layer to form first voids under the plurality of fins.