| 发明名称 | Methods of manufacturing semiconductor device | ||
| 摘要 | A method of manufacturing a semiconductor device includes forming first auxiliary patterns, alternately forming first material layers and second material layers on the sidewalls of the first auxiliary patterns so that a gap region between the first auxiliary patterns adjacent to each other is filled, removing the second material layers, and forming charge storage layers in respective regions from which the second material layers have been removed. | ||
| 申请公布号 | US8999784(B2) | 申请公布日期 | 2015.04.07 |
| 申请号 | US201213602104 | 申请日期 | 2012.09.01 |
| 申请人 | SK Hynix Inc. | 发明人 | Ahn Sang Tae |
| 分类号 | H01L29/788;H01L21/336;H01L29/792;H01L29/66;H01L21/28;B82Y10/00;B82Y40/00;H01L29/423;H01L27/115;H01L29/06 | 主分类号 | H01L29/788 |
| 代理机构 | William Park & Associates Patent Ltd. | 代理人 | William Park & Associates Patent Ltd. |
| 主权项 | 1. A method of manufacturing a semiconductor device, the method comprising: forming first auxiliary patterns; alternately forming first material layers and second material layers on sidewalls of the first auxiliary patterns so that a gap region between the first auxiliary patterns adjacent to each other is filled; removing the second material layers; and forming charge storage layers in a nanowire form by filling the regions from which the second material layers have been removed with respective metal layers. | ||
| 地址 | Gyeonggi-do KR | ||