Semiconductor device and method of forming thermally conductive layer between semiconductor die and build-up interconnect structure

摘要

A semiconductor device has a thermally conductive layer with a plurality of openings formed over a temporary carrier. The thermally conductive layer includes electrically non-conductive material. A semiconductor die has a plurality of bumps formed over contact pads on the die. The semiconductor die is mounted over the thermally conductive layer so that the bumps are disposed at least partially within the openings in the thermally conductive layer. An encapsulant is deposited over the die and thermally conductive layer. The temporary carrier is removed to expose the bumps. A first interconnect structure is formed over the encapsulant, semiconductor die, and bumps. The bumps are electrically connected to the first interconnect structure. A heat sink or shielding layer can be formed over the semiconductor die. A second interconnect structure can be formed over the encapsulant and electrically connected to the first interconnect structure through conductive vias formed in the encapsulant.

主权项

1. A method of making a semiconductor device, comprising: forming a thermally conductive layer including an opening in the thermally conductive layer, the thermally conductive layer being electrically non-conductive; providing a semiconductor die; disposing the semiconductor die over the thermally conductive layer; and depositing an encapsulant over the semiconductor die and thermally conductive layer.