发明名称 |
Method of forming fine patterns of semiconductor device |
摘要 |
A method of forming a micro pattern of a semiconductor device may include forming an acid-extinguisher containing film on a substrate, forming a photoresist film containing a potential acid on the acid-extinguisher containing film, forming an exposed area containing acids by exposing a portion of the photoresist film to light, forming an insoluble polymer thin film between the acid-extinguisher containing film and the exposed area by extinguishing the acids of the exposed area at an interface between the acid-extinguisher containing film and the exposed area, developing the photoresist film to form a space exposing the insoluble polymer thin film in the exposed area and a photoresist pattern integrally connected to the insoluble polymer thin film, exposing the acid-extinguisher containing film through the space by removing the insoluble polymer thin film, and removing the acid-extinguisher containing film exposed through the space. |
申请公布号 |
US8999840(B2) |
申请公布日期 |
2015.04.07 |
申请号 |
US201313939664 |
申请日期 |
2013.07.11 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Koh Cha-won |
分类号 |
H01L21/027;H01L21/308;H01L21/02;H01L21/311;G03F7/09 |
主分类号 |
H01L21/027 |
代理机构 |
Harness, Dickey & Pierce, P.L.C. |
代理人 |
Harness, Dickey & Pierce, P.L.C. |
主权项 |
1. A method of forming a micro pattern of a semiconductor device, the method comprising:
forming an acid-extinguisher containing film on a substrate; forming a photoresist film on the acid-extinguisher containing film, the photoresist film containing a potential acid; forming an exposed area by exposing a portion of the photoresist film to light, the exposed area containing acids; forming an insoluble polymer thin film between the acid-extinguisher containing film and the exposed area by extinguishing the acids of the exposed area at an interface between the acid-extinguisher containing film and the exposed area; developing the photoresist film to form a space exposing the insoluble polymer thin film in the exposed area and a photoresist pattern integrally connected to the insoluble polymer thin film; exposing the acid-extinguisher containing film through the space by removing the insoluble polymer thin film; and removing the acid-extinguisher containing film exposed through the space. |
地址 |
Gyeonggi-do KR |