发明名称 Methods of fabricating nano-scale structures and nano-scale structures fabricated thereby
摘要 Methods of fabricating nano-scale structures are provided. A method includes forming a first hard mask pattern corresponding to first openings in a dense region, forming first guide elements on the first hard mask pattern aligned with the first openings, and forming second hard mask patterns in a sparse region to provide isolated patterns. A blocking layer is formed in the sparse region to cover the second hard mask patterns. A first domain and second domains are formed in the dense region using a phase separation of a block co-polymer layer. Related nano-scale structures are also provided.
申请公布号 US8999862(B1) 申请公布日期 2015.04.07
申请号 US201414247063 申请日期 2014.04.07
申请人 SK Hynix Inc. 发明人 Ban Keun Do;Bok Cheol Kyu;Kim Myoung Soo;Lee Jung Hyung;Shim Hyun Kyung;Oh Chang Il
分类号 H01L21/31;H01L21/469;H01L21/033;H01L21/306 主分类号 H01L21/31
代理机构 代理人
主权项 1. A method of fabricating a nano-scale structure, the method comprising: forming a first preliminary mask pattern defining first openings and second preliminary mask patterns providing isolated patterns on a hard mask layer; forming first guide elements on sidewalls of the first openings and second guide elements on sidewalls of the second preliminary mask patterns; etching the hard mask layer using the first and second guide elements and the first and second preliminary mask patterns as etch masks to form a first hard mask pattern into which the first openings extend and second hard mask patterns having shapes of the isolated patterns; removing the first and second preliminary mask patterns; forming a blocking layer covering the second hard mask patterns; forming a block co-polymer layer filling the first openings having sidewalls defined by the first guide elements and spaces between the first guide elements; and phase-separating the block co-polymer layer to form first and second domains in the spaces between the first guide elements.
地址 Icheon KR