| 主权项 |
1. An optoelectronic component having a semiconductor body comprising an epitaxial layer sequence having an active layer that generates radiation, and a carrier substrate consisting of a semiconductor material connected to the semiconductor body by a solder layer,
wherein the carrier substrate comprises a first through-connection and a second through-connection each of which extend from a first main surface of the carrier substrate facing the semiconductor body to a second main surface of the carrier substrate facing away from the semiconductor body, the epitaxial layer sequence comprises a p-doped semiconductor region and an n-doped semiconductor region, wherein the first through-connection connects in an electrically conductive manner to the p-doped semiconductor region via a first sub-region of the solder layer, and the second through-connection connects in an electrically conductive manner to the n-doped semiconductor region via a second sub-region of the solder layer, the carrier substrate comprises a surface doping zone which extends along the first main surface, the surface doping zone comprises a p-conductive region which contains a p-dopant, the surface doping zone comprises an n-conductive region adjacent to the p-conductive region and contains an n-dopant and a p-dopant so that a pn-junction is formed between the p-conductive region and the n-conductive region, the n-conductive region electrically connects to the first sub-region of the solder layer and the p-conductive region electrically connects to the second sub-region of the solder layer so that the pn-junction in the surface doping zone forms a protective diode for the semiconductor body, the p-conductive region contains a p+-conductive region having a higher concentration of p-dopant than a remaining p-conductive region, and the p+-conductive region is disposed as a ring around the first through-connection. |
