| 摘要 |
A device comprises a control gate structure over a substrate, a memory gate structure over the substrate, wherein the memory gate structure comprises a memory gate electrode and a memory gate spacer and the memory gate electrode is an L-shaped structure, a charge storage layer formed between the control gate structure and the memory gate structure, a first spacer along a sidewall of the memory gate structure, a second spacer over a top surface of the memory gate structure, a first drain/source region formed in the substrate and adjacent to the memory gate structure and a second drain/source region formed in the substrate and adjacent to the control gate structure. |
