| 摘要 |
A light emitting device according to an embodiment includes a light emitting structure which includes: a substrate, a first buffer layer of multiple patterns on the substrate, a first insulating layer arranged on the first buffer layer, a second buffer layer arranged on the first insulating layer, a second insulating layer arranged on the second buffer layer, a third buffer layer arranged on the second buffer layer and the second insulating layer, a first conductivity type semiconductor layer formed on the third buffer layer, an active layer arranged on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer arranged on the active layer. In an embodiment, an insulating layer is formed between the substrate and the light emitting structure. Thereby, the increase of dislocation can be prevented. Also, the lattice mismatch of Si and GaN is reduced to grow a high efficiency GaN film. |
