| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in charge holding characteristics.SOLUTION: A transistor whose gate is connected to a charge-holding node is used as an OS transistor. The electric charges are accumulated in a first capacitive element; and when data in the charge-holding node is read, the data in the charge-holding node is read depending on whether or not the accumulated electric charges are transferred to a second capacitive element. According to this configuration, an Si transistor where a leak current is generated via a gate insulating film is not used as a transistor connected to the charge-holding node, thereby improving charge-holding characteristics in the charge-holding node. In addition, operation in reading the data is enabled without requiring the transistor characteristics equal to the Si transistor. |
