SEMICONDUCTOR DEVICE CONNECTED BY ANISOTROPIC CONDUCTIVE FILM

摘要

A semiconductor device connected by an anisotropic conductive film including a first insulation layer, a conductive layer, and a second insulation layer one above another, wherein the conductive layer has an expansion length of 20% or less in a width direction thereof, and the second insulation layer has an expansion length of 50% or more in a width direction thereof, the expansion length is calculated according to Equation 1, below, after glass substrates are placed on upper and lower sides of the anisotropic conductive film respectively, followed by compression at 110° C. to 200° C. for 3 to 7 seconds under a load of 1 MPa to 7 MPa per unit area of a sample,;Increased ratio of expansion length(%)=[(length of corresponding layer in width direction after compression−length of corresponding layer in width direction before compression)/length of corresponding layer in width direction before compression]×100.  [Equation 1]

主权项

1. A semiconductor device connected by an anisotropic conductive film, the anisotropic conductive film comprising:
a first insulation layer, a conductive layer, and a second insulation layer sequentially stacked one above another, wherein: the conductive layer has an increased ratio of expansion length of 20% or less in a width direction thereof, and the second insulation layer has an increased ratio of expansion length of 50% or more in a width direction thereof, the increased ratio of expansion length is calculated according to Equation 1, below, after glass substrates are placed on upper and lower sides of the anisotropic conductive film respectively, followed by compression at 110° C. to 200° C. for 3 to 7 seconds under a load of 1 MPa to 7 MPa per unit area of a sample,
Increased ratio of expansion length(%)=[(length of layer in width direction after compression−length of layer in width direction before compression)/length of layer in width direction before compression]×100.  [Equation 1]