WAFER PROCESSING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME

摘要

A wafer processing method, by which a device wafer may be aligned and bonded to a carrier wafer to perform a back grinding process for the device wafer and may be separated from the carrier wafer after performing the back grinding process, and a method of manufacturing a semiconductor device by using the wafer processing method are provided. The wafer processing method includes: disposing a first magnetic material on a front side of a wafer and disposing a second magnetic material on a carrier wafer, wherein a surface of the first magnetic material and a surface of the second magnetic material, which face each other, have opposite polarities; aligning and bonding the wafer to the carrier wafer by magnetic attraction between the first magnetic material and the second magnetic material; grinding a back side of the wafer to make the wafer thin; and separating the wafer from the carrier wafer.

主权项

1. A wafer processing method comprising:
disposing a first magnetic material on a front side of a wafer and disposing a second magnetic material on a carrier wafer, wherein an outwardly facing surface of the first magnetic material and an outwardly facing surface of the second magnetic material have opposite polarities; positioning the wafer and the carrier wafer relative to one another such that the outwardly facing surface of the first magnetic material faces the outwardly facing surface of the second magnetic material; aligning and bonding the wafer to the carrier wafer by magnetic attraction between the first magnetic material and the second magnetic material; grinding a back side of the wafer to make the wafer thin; and separating the wafer from the carrier wafer.