| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME |
| 摘要 |
A semiconductor device includes: a second conductive layer formed over a first conductive layer; and a dummy conductive layer formed between the first and second conductive layers with through-holes formed therein. The first and second conductive layers include signal lines electrically coupled to each other through signal metal contacts passing through the through-holes, and the second conductive layer includes power lines electrically coupled to the dummy conductive layer through power metal contacts. |
| 申请公布号 |
US2015091185(A1) |
申请公布日期 |
2015.04.02 |
| 申请号 |
US201414148068 |
申请日期 |
2014.01.06 |
| 申请人 |
SK hynix Inc. |
发明人 |
PARK Min Su |
| 分类号 |
H01L23/522;H01L21/768 |
主分类号 |
H01L23/522 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a second conductive layer formed over a first conductive layer; and a dummy conductive layer formed between the first and second conductive layers with through-holes formed therein, wherein the first and second conductive layers comprise signal lines electrically coupled to each other through signal metal contacts passing through the through-holes, and the second conductive layer comprises power lines electrically coupled to the dummy conductive layer through power metal contacts. |
| 地址 |
Icheon-si KR |
