SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

Disclosed is a semiconductor device manufacturing method comprising: forming an element isolation region in one principal face of a semiconductor substrate of one conductivity type; forming a gate electrode extending from an element region to the element isolation region at both sides of the element region in a first direction, both end portions of the gate electrode in the first direction being on the element isolation region and respectively including a concave portion and protruding portions at both sides of the concave portion; carrying out ion implantation of impurities of the one conductivity type from a direction tilted from a direction perpendicular to the one principal face toward the first direction so that first and second impurity implantation regions of the one conductivity type are formed in the one principal face in two end regions of the element region in the first direction.

主权项

1. A semiconductor device comprising:
a semiconductor substrate of one conductivity type; an element isolation region in one principal face of the semiconductor substrate, and an element region surrounded by the element isolation region; a gate dielectric film on the one principal face of the semiconductor substrate; a gate electrode that is formed on the gate dielectric film so as to extend from the element region to the element isolation region at both sides of the element region in a first direction, both sides of the gate electrode in a second direction orthogonal to the first direction being respectively separated from the element isolation region, and both end portions of the gate electrode in the first direction being disposed on the element isolation region and respectively including a concave portion and protruding portions at both sides of the concave portion; first and second impurity regions of the one conductivity type respectively provided in the one principal face in two end regions of the element region in the first direction, the two end regions contacting the element isolation region, the first and second impurity regions of the one conductivity type being respectively separated from both ends of the gate electrode in the second direction; and first and second impurity regions of an opposite conductivity type respectively formed in the element region at both sides of the gate electrode in the second direction.