RESISTIVE MEMORY APPARATUS AND MANUFACTURING METHOD THEREOF

摘要

A resistive memory apparatus includes a first electrode formed on a semiconductor substrate, an insulating layer formed on the first electrode and including a hole exposing an upper surface of the first electrode, a data storage unit in which a first resistance-variable material and a second resistance-variable material are alternately formed in the hole at least once, and a second electrode formed on the data storage unit.

主权项

1. A resistive memory apparatus comprising:
a first electrode formed on a semiconductor substrate; an insulating layer formed on the first electrode and including a hole exposing an upper surface of the first electrode; a data storage unit in which a first resistance-variable material and a second resistance-variable material having different resistances from each other are alternately formed at least once in the hole; and a second electrode formed on the data storage unit.