SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME

摘要

A silicon carbide semiconductor substrate (10) is provided with a first principal surface (10a) and a second principal surface (10b) opposite the first principal surface (10a). The maximum diameter of the first principal surface (10a) is greater than 100mm, and the thickness of the silicon carbide semiconductor substrate (10) is 700μm or less. The dislocation density is 500/mm2 or less in an arbitrary region having a surface area of 1mm2 and located in a region (OR2) within 5mm from the outer-circumferential edge section (OR) of the first principal surface (10a) toward the center (O) of the first principal surface (10a). As a result, the present invention provides a silicon carbide semiconductor substrate capable of minimizing cracking.