| 摘要 |
The present technology relates to a solid state imaging element allowing properties of phase contrast pixels to be constant independently from the chip location, to a driving method therefor, and to an electronic device. A pixel array part is provided with a matrix of normal pixels from which color component signals are obtained and phase contrast pixels from which phase contrast detection signals are obtained, each of said normal pixels having a photodiode (PD) for receiving incident light and performing photoelectric conversion, and each of said phase contrast pixels having a photodiode (PD1) and photodiode (PD2) paired with each other with the light-receiving surfaces thereof being sized according to image height. The paired photodiode (PD1) and photodiode (PD2) each have a first region serving as the main portion of electric charge accumulation and a second region which is for photoelectric conversion and contributes to transferring charges to the main portion. The present technology can be applied for instance to a CMOS image sensor. |
