| 摘要 |
<p>The present invention relates to an apparatus for forming a photoresist pattern and a method thereof. The apparatus for forming a photoresist pattern according to the present invention includes a substrate which has a photoresist layer formed on an upper side; heating units which are arranged in the lower part of the substrate to bake the photoresist layer and is installed along the scanning direction of a nozzle which applies a developing solution to the upper part of the substrate; and a gap controlling part which controls a gap between each heating unit and the substrate. The backing temperature of the substrate gradually decreases from the scanning start point of the nozzle to the scanning end point of the nozzle so that the temperature and the gap of each heating unit can be controlled. Thus, in a puddle type developing process, the hardening level of the photoresist layer gradually decreases in the scanning direction of the nozzle so that the baking temperature of the substrate in a soft baking process gradually decreases from the scanning start point to the scanning end point. Thus, the developing speed gradually increases in the scanning direction so that the line width of the photoresist pattern becomes uniform. Therefore, a line pattern or an electrode pattern formed by using the photoresist pattern as an etch mask becomes uniform so that the error rate of finished products can be reduced.</p> |
