| 主权项 |
1. A method of manufacturing a substrate for a high efficiency nitride-based light emitting diode on which a nano to micron sized pattern is formed, comprising:
a convex section forming step of forming a convex section including any one selected from the group consisting of SiO2, Si3N4 and a combination thereof on one surface of the substrate; and a crystallization step of annealing the substrate including the convex section and crystallizing the convex section of the nano to micron sized pattern; wherein: in the convex section forming step, the substrate is processed through UV ozone processing, piranha solution processing, O2 processing, or plasma processing to improve an adhesive force with the convex section, the nano to micron sized pattern comprises a bottom section and the convex section, and a lower end diameter of the convex section is 0.1 to 3 times a light emission wavelength of the light emitting diode, the bottom section and the convex section of the nano to micron sized pattern are alternately repeatedly formed, and a formation cycle of a first convex section and a second convex section adjacent to the first convex section is 0.2 to 6 times the light emission wavelength of the light emitting diode, and the nano to micron sized pattern repeatedly comprises any one selected from the group consisting of a hemispherical shape, a triangular pyramidal shape, a quadrangular pyramidal shape, a hexagonal pyramidal shape, a conical shape and a cut-spherical shape. |
