| 摘要 |
The present invention relates to a high-efficiency AlGaInP light-emitting diode directly grown on a transparent substrate and a method of manufacturing the same, and, more particularly, to a high-efficiency AlGaInP light-emitting diode grown on a sapphire substrate and a method of manufacturing the same. According to the present invention, an AlGaInP light-emitting diode is manufactured using an inexpensive sapphire substrate having high transmittance to ultraviolet rays, infrared rays and visible rays. The AlGaInP light-emitting diode according to the present invention can emit light with high efficiency because a lower substrate does not absorb light, and can be effectively manufactured because a process of removing a GaAs or a process of bonding a sapphire substrate is not conducted. |
