PHASE CHANGE MEMORY AND FABRICATION METHOD

摘要

A phase change memory and its fabrication method are provided. A bottom electrode structure is provided through a substrate. A mask layer is formed on the substrate and the bottom electrode structure. A first opening is formed in the mask layer to expose the bottom electrode structure. A spacer is formed on sidewalls and bottom surface portions of the first opening to expose a surface portion of the bottom electrode structure. The first opening including the spacer therein has a bottom width less than a top width. A heating layer is formed at least on the surface portion of the bottom electrode structure exposed by the spacer. A phase change layer is formed on the heating layer to completely fill the first opening. A top electrode is formed on the phase change layer and the mask layer.

主权项

1. A method for fabricating a phase change memory, comprising:
providing a substrate containing a bottom electrode structure through the substrate, the bottom electrode structure having a top surface flushed with a top surface of the substrate; forming a mask layer on the flushed top surfaces of the substrate and the bottom electrode structure; forming a first opening in the mask layer to expose the top surface of the bottom electrode structure; forming a spacer on sidewalls and bottom surface portions of the first opening to expose a surface portion of the bottom electrode structure, wherein the first opening including the spacer therein has a width at a bottom of the first opening less than a width at a top of the first opening; forming a heating layer at least on the surface portion of the bottom electrode structure exposed by the spacer, the heating layer having a top surface lower than a top surface of the mask layer; forming a phase change layer on the heating layer to completely fill the first opening; and forming a top electrode on the phase change layer and the mask layer.