发明名称 PATTERN FORMING METHOD, METHOD FOR FORMING PATTERNED MASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
摘要 A pattern forming method which comprises:(I) a step wherein an active light sensitive or radiation sensitive resin composition, which contains (A) a resin having a repeating unit containing a group that is decomposed by the action of an acid and generates a polar group and (B) a compound that generates an acid by irradiation of active light or radiation, is applied to a substrate so as to form a first film; (II) a step wherein the first film is exposed; (III) a step wherein the exposed first film is developed so as to form a line-and-space pattern; and (IV) a step wherein the line-and-space pattern is covered by a second film. This pattern forming method is characterized in that the top width of the line pattern of the line-and-space pattern formed in the step (III) is larger than the bottom width thereof.
申请公布号 WO2015046449(A1) 申请公布日期 2015.04.02
申请号 WO2014JP75681 申请日期 2014.09.26
申请人 FUJIFILM CORPORATION 发明人 YAMAMOTO, HISAO;SUGIYAMA, SHINICHI
分类号 G03F7/40;G03F7/004;G03F7/039;H01L21/027;H01L21/3065 主分类号 G03F7/40
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