发明名称 |
PATTERN FORMING METHOD, METHOD FOR FORMING PATTERNED MASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE |
摘要 |
A pattern forming method which comprises:(I) a step wherein an active light sensitive or radiation sensitive resin composition, which contains (A) a resin having a repeating unit containing a group that is decomposed by the action of an acid and generates a polar group and (B) a compound that generates an acid by irradiation of active light or radiation, is applied to a substrate so as to form a first film; (II) a step wherein the first film is exposed; (III) a step wherein the exposed first film is developed so as to form a line-and-space pattern; and (IV) a step wherein the line-and-space pattern is covered by a second film. This pattern forming method is characterized in that the top width of the line pattern of the line-and-space pattern formed in the step (III) is larger than the bottom width thereof. |
申请公布号 |
WO2015046449(A1) |
申请公布日期 |
2015.04.02 |
申请号 |
WO2014JP75681 |
申请日期 |
2014.09.26 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
YAMAMOTO, HISAO;SUGIYAMA, SHINICHI |
分类号 |
G03F7/40;G03F7/004;G03F7/039;H01L21/027;H01L21/3065 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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