| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor substrate and a manufacturing method of the same, which prevent deterioration in an oxide semiconductor pattern in a process.SOLUTION: A thin film transistor substrate comprises an insulating substrate 10, a gate insulation film 32 formed on the insulating substrate, an oxide semiconductor layer 42a arranged on the gate insulation film, an anti-etching pattern 52a formed on the oxide semiconductor layer, and a source electrode 65 and a drain electrode 66 which are formed on the anti-etching pattern. All lateral faces of the anti-etching pattern lie inside lateral faces of the oxide semiconductor layer. |
