| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS |
| 摘要 |
According to one embodiment, a method of manufacturing a semiconductor device includes forming a resist and a layer to be etched on a substrate, forming a non-cured layer on the resist by supplying a metal compound containing Ru, forming a cured layer on a surface layer of the resist by using the non-cured layer, and etching the layer to be etched by reactive ion etching using the cured layer and the resist as a mask. |
| 申请公布号 |
US2015093903(A1) |
申请公布日期 |
2015.04.02 |
| 申请号 |
US201414192487 |
申请日期 |
2014.02.27 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Aoyama Tomonori |
| 分类号 |
H01L21/311;H01L21/67;H01L21/027 |
主分类号 |
H01L21/311 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming a resist and a layer to be etched on a substrate; forming a non-cured layer on the resist by supplying a metal compound containing Ru; forming a cured layer on a surface layer of the resist by using the non-cured layer; and etching the layer to be etched by reactive ion etching using the cured layer and the resist as a mask. |
| 地址 |
Tokyo JP |
